1 . 9 0 . 9 5 0 . 9 5 2 . 9 0 . 4 1. 3 2. 4 1 . 0 sot-23 plastic-encapsulate transistors av 9012lt1 transistor (pnp) features power dissipation p cm: 0.3 w (tamb=25 ) collector current i cm: -0.5 a collector-base voltage v (br)cbo : -40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -100 a, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo ic= -1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-40 v, i e =0 -0.1 a collector cut-off current i ceo v ce =-20v, i b =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a h fe(1) v ce =-1v, i c = -50ma 120 400 dc current gain h fe(2) v ce =-1v, i c =-500ma 40 collector-emitter saturation voltage v ce (sat) i c =-500 ma, i b = -50ma -0.6 v base-emitter saturation voltage v be (sat) i c =-500 ma, i b = -50ma -1.2 v transition frequency f t v ce =-6v, i c = -20ma f= 30mhz 150 mhz classification of h fe(1) rank l h j range 120-200 200-350 300-400 device marking s9012lt1=2t1 unit: mm sot-23 1. base 2. emitter 3. collector
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